发明名称 POWER-SUPPLY CURRENT MEASURING METHOD AND POWER- SUPPLY CURRENT MEASURING DEVICE FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a power-supply current measuring method for a semiconductor device capable of detecting the defect generation state of a semiconductor device to be tested by a test system, and measuring stably the change of the power-supply current flowing in the semiconductor device to be tested by another testing device, while maintaining the defect generation state. SOLUTION: In a semiconductor device testing device equipped with a direct- current power source for the device for applying a prescribed power-supply voltage to the device to be tested, and maintaining the device to be tested in the operation state, an indirect current measuring means is interposed in a current supply route to the device to be tested, and the current flowing in the semiconductor device to be tested is measured indirectly by the indirect current measuring means, and the measurement result is changed into a voltage signal VCC and provided to another testing device as a current detection signal.</p>
申请公布号 JP2002139539(A) 申请公布日期 2002.05.17
申请号 JP20000330290 申请日期 2000.10.30
申请人 ADVANTEST CORP 发明人 KOMOTO YOSHIO
分类号 G01R31/26;G01R15/20;G01R15/24;G01R31/319;(IPC1-7):G01R31/26 主分类号 G01R31/26
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