| 摘要 |
PURPOSE: A sense amplifier connection structure of a semiconductor memory device is provided, which reduces the total number of unit sense amplifier into a half using an adjacent sense amplifier besides a prior unit sense amplifier connected for a bit line sensing operation of a unit mat. CONSTITUTION: The first bit line pair(BLP1) of a mat(MAT2) is connected to the first sense amplifier(SA3-1) of a unit sense amplifier block(SAB3), and the second bit line pair(BLP2) is connected to the first sense amplifier(SA1-1) of an adjacent unit sense amplifier block(SAB1) and shares a sense amplifier with the first bit line pair(BLP1). The selection of a bit line of each mat connected to the shared sense amplifier is adjusted through switching parts(10,20) comprising transistor switch. And the third bit line pair(BLP3) of the mat(MAT2) is connected to the first sense amplifier(SA4-1) of an adjacent unit sense amplifier block(SAB4) and shares the first sense amplifier(SA4-1) with the fourth bit line pair(BLP4) of a mat(MAT3). Also, the fourth bit line pair of the mat(MAT2) is connected to the first sense amplifier(SA2-1) of the unit sense amplifier block(SAB2) and shares the sense amplifier(SA2-1) with the third bit line pair.
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