Chemical mechanical polishing of dielectric materials

摘要

A semiconductor wafer has, an underlying dielectric layer with non-planarity features at its surface due to damascene topology, and a successive dielectric layer that is without damascene topology overlying the first dielectric layer, the successive dielectric layer having a smooth polished planar surface that minimizes cumulative non-planarity. The surface is polished by chemical-mechanical planarization with a reactive liquid borne by an aqueous polishing fluid applied at an interface of the successive dielectric layer and a polishing pad.