| 摘要 |
A method of fabricating a buried contact. On a substrate having a shallow trench isolation thereon, a gate oxide layer and a polysilicon layer are sequentially formed. The polysilicon layer and the gate oxide layer are patterned to expose a portion of the substrate. A diffusion region is formed in the exposed substrate. On the polysilicon layer and the exposed diffusion region, an amorphous silicon layer is formed. Consequently, a native oxide layer is formed between the polysilicon layer and the amorphous silicon layer, and between the amorphous silicon layer and the diffusion region. An anti-reflection coating layer is formed on the amorphous silicon layer. Using the native oxide layer as an etching buffer, the anti-reflection coating layer and the amorphous silicon layer are patterned until the diffusion region and the polysilicon layer are exposed. A spacer is formed on a sidewall of the patterned anti-reflection coating layer and the patterned amorphous silicon layer, while the exposed diffusion region is also covered thereby. Using the spacer and the patterned anti-reflection coating layer as a mask, the polysilicon layer and the gate oxide layer are etched until the substrate is exposed. A source/drain region is further formed in the exposed substrate.
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