| 摘要 |
To form a monocrystalline silicon thin film having high electron/hole mobility uniformly at relatively low temperature, to permit manufacture of an electro-optic device such as a semiconductor device for a display using this monocrystalline silicon film, to permit manufacture of a nMOS or pMOSTFT display unit comprising an LDD having high switching performance and low leak current, and a peripheral circuit comprising a cMOS, n or pMOSTFT, or a combination thereof, of high drive performance, in a one-piece construction, thereby realizing a display panel having high image quality, fine detail, narrow frame edge, wide screen, high efficiency and large screen size wherein even a large glass substrate of relatively low strain point may be used, productivity is high, there is no need for costly equipment thereby permitting cost reductions, adjustment of threshold value is easy, and fast operation is possible due to reduction of resistance. Monocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film 50 formed on a substrate 1, and a monocrystalline silicon layer 7 obtained is used as a dual gate MOSTFT of an electro-optic device such as an LCD comprising a display unit and peripheral drive circuit in a one-piece construction.
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