发明名称 |
Radio frequency (RF) power devices having faraday shield layers therein |
摘要 |
Integrated power devices include a plurality of field effect transistor unit cells and a Faraday shield layer that reduces parasitic gate-to-drain capacitance (Cgd) and concomitantly improves high frequency switching performance. These power devices may include a field effect transistor in an active portion of a semiconductor substrate and a gate electrode that is electrically connected to a gate of the field effect transistor. A Faraday shield layer is provided between at least a first portion of the gate electrode and a drain of the field effect transistor in order to capacitively decouple the first portion of the gate electrode from the drain. The gate electrode and drain typically extend adjacent opposing faces of the semiconductor substrate. The Faraday shield layer is preferably electrically connected to a source of the field effect transistor and provides edge termination. |
申请公布号 |
US2002056883(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20010993412 |
申请日期 |
2001.11.05 |
申请人 |
BALIGA BANTVAL JAYANT |
发明人 |
BALIGA BANTVAL JAYANT |
分类号 |
H01L21/336;H01L23/552;H01L23/60;H01L23/66;H01L27/088;H01L29/06;H01L29/40;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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