Production of field effect structure used in electronic devices comprises preparing substrate with gate region arranged between drain and source, and producing a germanium sacrificial layer

摘要

Production of a field effect structure comprises preparing a substrate (1) with a gate region (20) arranged between a drain and a source (2), the gate region being covered with a gate oxide (3); producing a germanium sacrificial layer (5) on the gate region; forming a structure for a gate structure (60) made from silicon-germanium on the sacrificial layer; and etching the sacrificial layer. Preferred Features: The substrate is made from silicon and the gate oxide from silicon oxide. The drain and source are formed in the substrate by doping. Etching of the sacrificial layer is carried out using an aqueous solution of an oxidant, especially H2O2.