Semiconductor laser, having co-doped distributed Bragg reflectors, particularly vertical cavity surface emitting lasers

摘要

A semiconductor laser comprises: (I) an active layer (25); and (II) at least one reflective layer (27) on one side of the active layer, comprising: (i) a first layer (33), having a first refractive index, formed of a first compound including a first dopant; and (ii) a second layer (35), having a second refractive index, formed of a second compound including a second dopant.