SEMICONDUCTOR DEVICE HAVING SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND APPARATUS FOR PROCESSING SIGNAL

摘要

PURPOSE: A semiconductor device having a silicon-on-insulator(SOI) metal-oxide-semiconductor(MOS) transistor is provided to make the body of a main MOS transistor grounded and to reduce a leakage current in an off-state of the main MOS transistor, by connecting the body extending from the channel region of the main MOS transistor connected to an assistance MOS transistor and by electrically connecting a gate interconnection of the main MOS transistor with a gate interconnection of the assistance MOS transistor. CONSTITUTION: The main MOS transistor(100) includes the first gate interconnection receiving an outside signal, the first source/drain region(122) of the first conductivity and the body(108). The assistance MOS transistor(150) selectively switches the body to a floating or grounding state according to the outside signal, including the second gate interconnection, the second source/drain region(172) of the second conductivity type opposite to the first conductivity type. An interconnection layer(140) electrically connects the first gate interconnection with the second gate interconnection.