| 摘要 |
A thin film semiconductor device comprising an insulating substrate, a plurality of thin film transistors integrated on the insulating substrate, each thin film transistor including a gate electrode, a gate insulating film, a semiconductor thin film and an interlayer insulating film which are laminated in this order from the lower side, and the semiconductor thin film being formed with a channel region confronting the gate electrode, and a source region and a drain region which are located at both sides of the channel region, and a conductor film which is formed on the surface of the interlayer insulating film so as to be overlapped with the channel region. A display device having a pair of insulating substrates, electrooptical material held in the gap between the insulating substrates, a counter electrode formed in one of the insulating substrates, and a plurality of pixel electrodes and a plurality of thin film transistors which are integrated on the other insulating substrate.
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