发明名称 |
Method for forming gate electrode structure with improved profile and gate electrode structure therefor |
摘要 |
A gate electrode, in which the slope of the profile of a gate electrode forming material layer, for example, a refractory metal silicide layer is prevented from being decreased due to thermal expansion by patterning a refractory metal silicide layer after performing a thermal process on a refractory metal silicide layer, thereby having a stable operation characteristic, and a method for manufacturing the same are provided.
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申请公布号 |
US2002056917(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20010970536 |
申请日期 |
2001.10.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM BONG-SOO;JU BYONG-SUN;PAIK JAE-CHEOL |
分类号 |
H01L21/28;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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