发明名称 |
PIEZOELECTRIC STRUCTURES FOR ACOUSTIC WAVE DEVICES AND MANUFACTURING PROCESSES |
摘要 |
High quality epitaxial layers (26) of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. The piezoelectric films can be used for bulk or surface acoustic wave devices. |
申请公布号 |
WO0209160(A3) |
申请公布日期 |
2002.05.16 |
申请号 |
WO2001US22747 |
申请日期 |
2001.07.19 |
申请人 |
MOTOROLA, INC. |
发明人 |
FINDER, JEFFREY, M.;EISENBEISER, KURT;RAMDANI, JAMAL;DROOPAD, RAVINDRANATH;OOMS, WILLIAM, JAY |
分类号 |
H01L27/20;H01L41/22;H03H3/02;H03H3/08;H03H9/02;H03H9/05;H03H9/17 |
主分类号 |
H01L27/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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