发明名称 |
Novel group IV metal precursors and a method of chemical vapor deposition using the same |
摘要 |
An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of -2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-8 alkyl group; and R3 is a linear or branched C1-8 alkylene group. Also disclosed is a chemical vapor deposition method wherein a metal oxide thin film is formed on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability and is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.
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申请公布号 |
US2002058843(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20010933736 |
申请日期 |
2001.08.22 |
申请人 |
MIN YO SEP;CHO YOUNG JIN;KIM DAE SIG;LEE IK MO;LIM SUN KWON;LEE WAN IN;CHOI BO HYUN |
发明人 |
MIN YO SEP;CHO YOUNG JIN;KIM DAE SIG;LEE IK MO;LIM SUN KWON;LEE WAN IN;CHOI BO HYUN |
分类号 |
C07C225/14;C07F3/00;C07F7/28;C23C16/40;(IPC1-7):C07F7/22;C07F7/30 |
主分类号 |
C07C225/14 |
代理机构 |
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