METHOD FOR MANUFACTURING ANNEALED WAFER AND ANNEALED WAFER

摘要

A method for manufacturing an annealed wafer in which haze is suppressed thereby to improve the device characteristics by finding the relation between the angle of inclination of a wafer to be annealed with respect to (100) plane and the haze caused on the surface after annealing, and determining the inclination angle most suitable to suppress the haze. A silicon mirror wafer having a direction of crystal plane inclining at an angle of inclination theta within a range of 0.1 DEG < theta < 0.2 DEG with respect to the plane (100) or an equivalent plane is heat-treated in the atmosphere of a hydrogen gas, an inert gas, a nitrogen gas or their mixed gas.