发明名称 |
Semiconductor device including a repetitive pattern |
摘要 |
The present invention provides a DRAM in which a first repetitive unit including a plurality of decoders for selecting a plurality of word lines and a second repetitive unit having the same arrangement as that of the first repetitive unit are arranged symmetrically with respect a boundary region therebetween. The first and second repetitive units have a wire and a contact located on a boundary portion therebetween in common.
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申请公布号 |
US2002057589(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20020040479 |
申请日期 |
2002.01.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
AKITA HIRONOBU;SHIRATAKE SHINICHIRO;KOHNO FUMIHIRO |
分类号 |
G11C11/41;G11C8/10;G11C8/14;G11C11/401;G11C11/407;G11C11/408;G11C29/06;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):G11C5/06 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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