发明名称 Semiconductor device including a repetitive pattern
摘要 The present invention provides a DRAM in which a first repetitive unit including a plurality of decoders for selecting a plurality of word lines and a second repetitive unit having the same arrangement as that of the first repetitive unit are arranged symmetrically with respect a boundary region therebetween. The first and second repetitive units have a wire and a contact located on a boundary portion therebetween in common.
申请公布号 US2002057589(A1) 申请公布日期 2002.05.16
申请号 US20020040479 申请日期 2002.01.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 AKITA HIRONOBU;SHIRATAKE SHINICHIRO;KOHNO FUMIHIRO
分类号 G11C11/41;G11C8/10;G11C8/14;G11C11/401;G11C11/407;G11C11/408;G11C29/06;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):G11C5/06 主分类号 G11C11/41
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