发明名称 |
Edge border used for high voltage semiconductor component has the site of the bend and sealing of equipotential lines applied using a voltage in an insulating region |
摘要 |
Edge border comprises: a semiconductor body (1) of one conducting type with semiconducting regions (2,3) on an edge surface region bordering a first main surface; and a field plate (4) arranged on the edge surface region and the first main surface. The site of the bend and sealing of equipotential lines (9) is applied using a voltage in an insulating region (6). An Independent claim is also included for a process for the production of an insulating region in a semiconductor body. Preferred Features: The insulating region is an insulating region extending vertically from the first main surface into the semiconductor body.
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申请公布号 |
DE10051909(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
DE20001051909 |
申请日期 |
2000.10.19 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
AHLERS, DIRK;DETZEL, THOMAS;FRIZA, WOLFGANG;RUEB, MICHAEL |
分类号 |
H01L29/06;H01L29/40;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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