SYSTEM FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A system for metal organic chemical vapor deposition is provided which improves film quality and increases deposition speed by preventing generation of byproducts, and controls characteristics of the film quality and deposition speed as the need arises. CONSTITUTION: The system for metal organic chemical vapor deposition comprises an injector(130) injecting a gas phased source material; a heater block on which a substrate is rested, and which has a heater(120), wherein the gas phased source material coming out of the injector(130) is reacted and deposited on the substrate; a chamber(110) which receives the injector(130) and the heater block, and at one side of which an exhaust port is installed; a dome shaped reflection part(111) which is positioned at the upper part of the chamber(110) and reflects the gas phased source material injected from the injector(130) to the heater block; and a temperature control part controlling temperatures of the chamber(110) and the reflection part(111), wherein the temperature control part further comprises a hose(140) which encircles the dome shaped reflection part and the chamber, and in which a flowing material is filled; and a heat exchanger(150) which is connected to the hose.