| 摘要 |
<p>A memory device (14) having therein a plurality of memory blocks (10, 30, 80) each having a plurality of storage cells (12). A data vector (20, 20a, 20b) is distributed according to an assignment matrix (16, 90) to the storage cells (12). A reverse assignment matrix (24) can be used to recover the data bits (18). The memory block storage method can be accomplished entirely numerically or using a combination of analog and digital circuitry. Write blocks (40, 100) and recovery blocks (60, 110) are examples of such circuitry.</p> |
