METHOD FOR FORMING FIELD TRANSISTOR OF FLASH MEMORY

摘要

PURPOSE: A field transistor formation method of flash memories is provided to reduce a low breakdown voltage due to GILD(Gate Induced Drain Leakage) by forming a gate pattern to the field transistor used as ESD(Electro-Static Discharge). CONSTITUTION: After forming a field oxide(22) on a silicon substrate(21), source and drain regions(23,24) are formed by ion-implantation. A gate pattern is then formed between the drain region(24) and the field oxide(22). At this time, the drain region(24) is spaced apart from the field oxide. Thereby, a gate induced depletion region is formed at the overlapped portion with the drain region(24).