| 摘要 |
PURPOSE: A fine contact hole formation method of semiconductor devices is provided to minimize a line-width of fine contact hole by using two-step dry-etching processes. CONSTITUTION: After forming an insulating layer on the semiconductor substrate, a photoresist pattern is coated on the insulating layer to define a contact hole formation region(200). Then, a fine contact hole having a sloped sidewalls is formed by two-step dry-etching(210). That is, the insulating layer is firstly etched by using mixed gases of CF4 and CO under a high pressure of 50-200 mTorr more than(210a), and secondly etched by using mixed gases of C4F8, Ar and O2 under a lower pressure of 20-50 mTorr less than(210b).
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