发明名称 Integrated Circuit Devices Having Contact And Container Structures
摘要 Methods for forming contact structures and container structures, as well as integrated circuits that can be formed by employing those methods are provided. The integrated circuitry formed by the methods of the present invention provide capacitors in containers having sufficiently high storage capacitance for advanced integrated circuit devices. In addition the methods for forming such container capacitors facilitate the formation of contacts structures and provided for the formation of local interconnect structures and electrical contact to each of the structures formed.
申请公布号 US2002058380(A1) 申请公布日期 2002.05.16
申请号 US20010039950 申请日期 2001.12.31
申请人 PAREKH KUNAL R.;ZAHURAK JOHN K. 发明人 PAREKH KUNAL R.;ZAHURAK JOHN K.
分类号 H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 主分类号 H01L21/02
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