| 摘要 |
<p>A semiconductor device having a high-sensitivity light receiving element realized by providing the semiconductor light receiving element with an anti-reflection film for reducing both reflectance and surface level density at the same time, and a method for fabricating the same. A multilayer anti-reflection film (8), comprising a first insulation film (6) formed on the surface of a silicon substrate (1) and a second insulation film (7) formed thereon and having a refractive index different from that of the first insulation film (6), is formed in the light receiving region (10) of the semiconductor light receiving element PD, and the first insulation film (6) comprises a silicon oxide film formed by oxidizing silicon on the surface of the semiconductor light receiving element PD to form a semiconductor device. The semiconductor light receiving element PD receives light having a wavelength of 500 nm or less. At the time of fabricating the semiconductor device, the silicon oxide film (6) is formed by thermal oxidation at 800°C or above in oxygen gas atmosphere or mixture gas atmosphere of oxygen and hydrogen while exposing the silicon surface becoming the light receiving part of a photodiode PD.</p> |
