DRY ETCHING GAS AND METHOD FOR DRY ETCHING,申请号JP2001009769-传众专利搜索

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法人/股东/高管

发明名称	DRY ETCHING GAS AND METHOD FOR DRY ETCHING
摘要	<p>A dry etching gas comprising a compound having a CF3C moiety which is directly bonded to a triple bond.</p>
申请公布号	WO2002039494(P1)	申请公布日期	2002.05.16
申请号	JP2001009769	申请日期	2001.11.08
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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