发明名称 |
CVD REACTOR COMPRISING A SUBSTRATE HOLDER ROTATABLY MOUNTED AND DRIVEN BY A GAS FLOW |
摘要 |
The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber (2) arranged in a reactor housing (1) where the floor (3) thereof, comprises at least one substrate holder (6) which is rotatably driven by a gas flow flowing in a feed pipe (5) associated with said floor. Said substrate holder is disposed in a bearing cavity (4) on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity (4) is associated with a tray-shaped element (8) arranged below the outflow (7) of the feed pipe (5).
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申请公布号 |
WO0238839(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
WO2001EP12311 |
申请日期 |
2001.10.25 |
申请人 |
AIXTRON AG;KAEPPELER, JOHANNES;WISCHMEYER, FRANK;BERGE, RUNE |
发明人 |
KAEPPELER, JOHANNES;WISCHMEYER, FRANK;BERGE, RUNE |
分类号 |
C23C16/458;C30B25/12;H01L21/205;(IPC1-7):C30B25/10;C30B25/14 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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