| 摘要 |
<p>The invention concerns a method for growing a solid type II-VI semiconductor material comprising at least a first component and a second component, the method comprising the following steps: providing in a crucible a starting material including said components, the proportions of the components in the starting material being such that the first component acts as solvent; placing the crucible in an open tube type reactor, raising the reactor temperature to obtain a temperature profile in the reactor for melting the starting material in the crucible and for initiating evaporation of the first component, the pressure inside the reactor being adjusted, by circulating a gas, so that the partial pressures of the components at growth temperature are lower than atmospheric pressure, the partial pressure of the first component being higher than the pressure of the second component, the temperature profile being such that the melted charge is maintained at growth temperature equal or slightly higher than its balance point and lower than the melting temperature of the desired material, the temperature profile being likewise such that the crucible exhibits a cold spot where the material germinates and grows, the reactor having likewise a cold spot enabling condensation of the solvent.</p> |
