发明名称 COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM
摘要 PURPOSE: To provide a composition for the formation of an antireflection film to form an antireflection film between a photoresist layer and a substrate such that even when excimer laser light or the like is used as the light source for superior microfabrication, a photoresist patter having a square cross-sectional form can be formed on a substrate without causing phenomena of trailing, constriction or the like appearing in the lower part of a pattern. CONSTITUTION: The composition for the formation of an antireflection film contains an acidic compound and at least one kind of crosslinking agent selected from nitrogen-containing compounds having amino groups at least two hydrogen atoms of which are substituted by a hydroxyalkyl group and/or a alkoxyalkyl group. In the crosslinking agent, the proportion of trimers, dimers and monomers is controlled to < =15 wt.%.
申请公布号 KR20020036720(A) 申请公布日期 2002.05.16
申请号 KR20010069244 申请日期 2001.11.07
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 IGUCHI ETSUKO;TANAKA TAKESHI;WAKIYA KAZUMASA
分类号 G03F7/004;C09D179/02;G02B1/11;G03F7/09;G03F7/11;H01L21/027;(IPC1-7):G03F7/09 主分类号 G03F7/004
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