发明名称 |
COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM |
摘要 |
PURPOSE: To provide a composition for the formation of an antireflection film to form an antireflection film between a photoresist layer and a substrate such that even when excimer laser light or the like is used as the light source for superior microfabrication, a photoresist patter having a square cross-sectional form can be formed on a substrate without causing phenomena of trailing, constriction or the like appearing in the lower part of a pattern. CONSTITUTION: The composition for the formation of an antireflection film contains an acidic compound and at least one kind of crosslinking agent selected from nitrogen-containing compounds having amino groups at least two hydrogen atoms of which are substituted by a hydroxyalkyl group and/or a alkoxyalkyl group. In the crosslinking agent, the proportion of trimers, dimers and monomers is controlled to < =15 wt.%.
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申请公布号 |
KR20020036720(A) |
申请公布日期 |
2002.05.16 |
申请号 |
KR20010069244 |
申请日期 |
2001.11.07 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
IGUCHI ETSUKO;TANAKA TAKESHI;WAKIYA KAZUMASA |
分类号 |
G03F7/004;C09D179/02;G02B1/11;G03F7/09;G03F7/11;H01L21/027;(IPC1-7):G03F7/09 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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