发明名称 |
Thin film transistor array, method of producing the same, and display panel using the same |
摘要 |
By imparting conductivity to specified regions of a semiconductor material film 4 formed over a substrate 2, the semiconductor material film 4, in addition to being processed into channel portions (active layers) 4a, source portions 4b, and drain portions 4c of TFTs, is processed into conductive elements containing pixel electrodes 10 connected to the drain portions 4c. Regions composed of an intrinsic semiconductor to which impurities have not been added serve as the active layers (channel regions) of the TFTs and regions to which impurities have been added serve as conductive elements. When transparent electrodes are formed, an oxide semiconductor is used.
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申请公布号 |
US2002056838(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20010987516 |
申请日期 |
2001.11.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OGAWA KAZUFUMI |
分类号 |
G02F1/1333;G02F1/1343;G02F1/1368;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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