发明名称 |
Verfahren zur Strukturierung einer Siliziumoxid-Schicht |
摘要 |
The invention relates to a method for structuring a silicon oxide layer. According to said method, a substrate comprising a silicon oxide layer with a mask is provided in a plasma reactor. The silicon oxide layer is exposed to a plasma which is produced from an etching gas containing at least one fluorocarbon compound that is selected from the group consisting of compounds of the empirical formula CxHyFz, wherein x = 1 to 5, y = 0 to 4 and z = 2 to 10. The process is optimised by direct switching between the etching and deposition modes, which is achieved by varying the potential difference between the substrate and the plasma.
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申请公布号 |
DE10053780(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
DE20001053780 |
申请日期 |
2000.10.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GOLDBACH, MATTHIAS;HAUSDOERFER, BASTIAN;GRAHL, ORTRUN |
分类号 |
H01L21/311;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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地址 |
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