REFRESH TYPE SEMICONDUCTOR MEMORY DEVICE HAVING SPLIT WORD LINE ACTIVATION

摘要

PURPOSE: A refresh type semiconductor memory device having a split word line activation is provided, which assures a driving capability of an LA driver without extending a driving transistor size of the LA driver. CONSTITUTION: A number of memory cell array blocks(40) and a plurality of block sense amplifiers(30) and a plurality of sub word line drivers(20;SWD) are arranged like a conventional DRAM architecture to minimize an area penalty on a layout. That is, one sub word line driver and one block sense amplifier are shared by two memory cell array block. A circuit block including LA drivers and a PXiD circuit and a BSYD circuit is arranged on a conjunction area(50) located at a crossing point of the block sense amplifier area and the sub word line driver area. The LA drivers drive the block sense amplifier, and the PXiD circuit generates a driving control signal to control the sub word line driver. And the BSYD circuit enables the LA driver selectively in response to a block control signal.