| 摘要 |
PURPOSE: A method for fabricating a contact plug of a semiconductor device is provided to shorten an interval of time for a nuclear reaction of chemical vapor deposition(CVD) tungsten, by forming a tungsten layer by a sputtering deposition process. CONSTITUTION: A metal line is formed on an insulation substrate. An interlayer dielectric is formed on the metal line. The interlayer dielectric and the metal line are selectively eliminated to form a contact hole. A metal barrier layer is formed on the entire surface including the contact hole. The first metal layer for promoting a nuclear reaction is formed on the metal barrier layer. The second metal layer for a contact plug is formed on the first metal layer while a condition of a high pressure and a high flow rate is maintained.
|
