发明名称 METHOD AND CIRCUITRY FOR HIGH VOLTAGE APPLICATION WITH MOSFET TECHNOLOGY
摘要 A method and apparatus for high voltage applications, with the latest MOSFET technology having limited terminal-to-terminal voltage capability, includes a switch circuit having at least two serially coupled MOSFETs and a two-stage MOSFET connection using a plurality of resistors, and/or a bipolar transistor, and a plurality of diodes. One of the high voltage applications is a high speed write driver in a computer disk drive. The switch circuit switches on/off between zero volt and a voltage higher than a maximum terminal-to-terminal voltage of a single MOSFET which is typically five volts. A required voltage in high voltage applications can be in excess of, for example, 8 or 9 volts.
申请公布号 US2002057512(A1) 申请公布日期 2002.05.16
申请号 US19980078847 申请日期 1998.05.14
申请人 CHUNG PAUL WINGSHING;FREITAS DAVID ANTHONY;VANNORSDEL KEVIN ROY 发明人 CHUNG PAUL WINGSHING;FREITAS DAVID ANTHONY;VANNORSDEL KEVIN ROY
分类号 G11B5/00;G11B5/012;H03K17/10;(IPC1-7):G11B5/02 主分类号 G11B5/00
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