| 发明名称 |
Dual gate oxide process for deep submicron ICS |
| 摘要 |
An improved dual gate oxide process for dual-gated devices using oxygen ion implantation to vary the thickness of gate oxide layers. The desired layers are identified by photoresist layer patterning prior to an ion implantation. A subsequent heat treatment oxidizes the implanted region.
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| 申请公布号 |
US2002058382(A1) |
申请公布日期 |
2002.05.16 |
| 申请号 |
US20010026282 |
申请日期 |
2001.12.21 |
| 申请人 |
SHELTON GAIL D.;MILLER GAYLE W. |
发明人 |
SHELTON GAIL D.;MILLER GAYLE W. |
| 分类号 |
H01L21/8234;(IPC1-7):H01L21/823;H01L21/823;H01L21/336;H01L21/76 |
主分类号 |
H01L21/8234 |
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