| 摘要 |
A method for forming an accelerometer including the steps of providing a wafer of doped silicon, growing an oxide layer on the wafer, and forming an aperture in the oxide layer. The method further includes the steps of forming a layer of polysilicon on the wafer such that a portion of the polysilicon passes through the aperture and contacts the wafer, and etching the layer of polysilicon to form a beam and a capacitor plate. The wafer is then etched to form a response mass and a support, at least part of the response mass being located below the capacitor plate. Finally, the oxide layer is etched to separate the response mass from the support and from the capacitor plate, the response mass being coupled to the beam by polysilicon received through the aperture. |
