发明名称 |
METHOD FOR PRODUCING AN INTEGRATED CIRCUIT |
摘要 |
The invention relates to a method for producing an integrated circuit comprising the following steps: preparing a semi-conductor substrate (1) with a contacting circuit area (SS); providing an insulating layer (IS) on the surface of the semi-conductor substrate (1); providing a contact hole (KL) in the insulating layer (IS) for making contacting the circuit area (SS); providing an insulating spacer area (10`) in at least the area above the contact hole (KL); providing at least three trenches (BG1; BG2; BG3), the first (BG1) of which is arranged next to the contact hole (KL), a second (BG2) is disposed across the contact hole (KL) and a third (BG3) is next to the contact hole (KL). The spacer area (10`) is placed between the first and the second trench (BG1; BG2) and the second and the third trench (BG2; BG3); filling the trenches (BG1; BG2; BG3) with a conductive material; and chemical-mechanical polishing of conductive material for producing three separated trenches (BL1; BL2; BL3). |
申请公布号 |
WO0239488(A2) |
申请公布日期 |
2002.05.16 |
申请号 |
WO2001EP10783 |
申请日期 |
2001.09.18 |
申请人 |
INFINEON TECHNOLOGIES AG;HILLIGER, ANDREAS;STAUB, RALF;LUEKEN, EIKE |
发明人 |
HILLIGER, ANDREAS;STAUB, RALF;LUEKEN, EIKE |
分类号 |
H01L21/768;H01L21/60;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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