| 摘要 |
<p>A method for forming an electrical device structure in an integrated circuit comprises providing a substrate (11); forming a passivation layer (13) thereon; forming a plurality of through holes (15) in the passivation layer, the through holes; removing substrate material under the passivation layer by means of isotropic etching, thus forming at least a first cavity (19) in the substrate beneath the plurality of through holes; forming a dielectric layer (23) on top of the passivation layer to plug the through holes, thereby creating a membrane (24); and creating an electrical device (27), such as e.g. an inductor, above the membrane.</p> |
