| 发明名称 |
Method of making semiconductor device having first and second sealing resins |
| 摘要 |
A semiconductor device having resin formed on both surfaces of semiconductor elements, where a resin thickness ratio for the resin formed on the two surfaces at least 0.2 and not more than 1.
|
| 申请公布号 |
US2002056927(A1) |
申请公布日期 |
2002.05.16 |
| 申请号 |
US20010032009 |
申请日期 |
2001.12.31 |
| 申请人 |
OHUCHI SHINJI;TANAKA YASUO |
发明人 |
OHUCHI SHINJI;TANAKA YASUO |
| 分类号 |
H01L23/12;H01L21/301;H01L21/60;H01L21/68;H01L21/78;H01L23/00;H01L23/29;H01L23/31;H01L23/485;(IPC1-7):H01L23/28 |
主分类号 |
H01L23/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
