METHOD FOR PRODUCING TRENCH CAPACITORS FOR LARGE-SCALE INTEGRATED SEMICONDUCTOR MEMORIES

摘要

The invention relates to an electrochemical method for creating trenches for trench capacitors in p-doped silicon with an extremely high diameter/depth aspect ratio for large-scale integrated semiconductor memories. Trenches (macropores) with a diameter of less than approximately 100 nm and a depth of more than 10 mu can be produced at a high etch rate on p-doped silicon with an extremely low resistivity, thus obtaining trench capacitors in a cost-effective manner.