发明名称 Low-profile semiconductor device and method for manufacturing the same
摘要 A low-profile semiconductor device is disclosed which includes a substrate having a base layer formed with at least a hole and a plurality of conductive traces arranged on the base layer. A semiconductor die is attached to the base layer of the substrate opposite to the conductive traces and electrically connected to the conductive traces by a plurality of first conductive elements passing through the hole of the base layer. A plurality of second conductive elements are arrayedly connected to the terminal of each of the conductive traces for providing externally electrical connection to the semiconductor die. The semiconductor die is encapsulated by a first encapsulant formed on the surface of the substrate on which the semiconductor die is mounted. A second encapsulant is formed on the surface of the substrate on which the conductive traces are arranged to completely encapsulate the conductive traces, first conductive elements and the hole. Meanwhile, the second encapsulant is formed to encapsulate the second conductive elements in such a manner that the bottom ends of the second conductive elements are exposed to and flush with the bottom surface of the second encapsulant. <IMAGE>
申请公布号 EP1205973(A1) 申请公布日期 2002.05.15
申请号 EP20000124579 申请日期 2000.11.10
申请人 UNITED TEST CENTER INC. 发明人 BAI, JINCHUAN;TSAI, CHUNG-CHE
分类号 H01L23/31 主分类号 H01L23/31
代理机构 代理人
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