| 发明名称 |
Method for improving the uniformity and reducing the roughness of a silicon surface before dielectric layer formation |
| 摘要 |
<p>The instant invention is a method for forming a smooth interface between the upper surface of a silicon substrate and a dielectric layer. The invention comprises forming a thin amorphous region (180) on the upper surface (170) of a silicon substrate prior to forming the dielectric layer on the upper silicon surface.</p> |
| 申请公布号 |
EP1205966(A2) |
申请公布日期 |
2002.05.15 |
| 申请号 |
EP20010000615 |
申请日期 |
2001.11.09 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO, ANTONIO L. P. |
| 分类号 |
H01L29/78;H01L21/28;H01L21/302;H01L21/306;H01L21/31;H01L21/316;H01L21/318;H01L21/469;H01L29/51;(IPC1-7):H01L21/306 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
