| 摘要 |
<p>The invention relates to a semiconductor element comprising two pn junctions, which are structured in a wafer and which separate three electrically contactable areas with different charge carrier doping from each other (bipolar transistor). The charge carrier distribution in one of the outer charge carrier areas (collector area) is graded. According to the invention, charge carrier islands (34) are structured inside one of the more weakly doped partial charge carrier areas (20) of the graded outer charge carrier area (16) and are doped in the opposite manner to the partial charge carrier area (20).</p> |
