| 摘要 |
PURPOSE: A circuit configuration with internal supply voltage is provided to overcome a number of disadvantages by operating with greater operational reliability in conjunction with a small area occupation in the case of integrated fabrication. CONSTITUTION: A switching stage has two n-channel MOS transistors(10,11), which are connected in series by their drain-source paths. The series circuit is connected between terminals(31,32) for an internal supply voltage generated by a voltage generator(3). A negative pole of the internal supply voltage is formed by a reference-ground potential(VSS) at the terminal(32). A positive pole of the internal supply voltage is formed by a supply potential(VINT) at the terminal(31). The supply voltage generator(3) is fed by an externally provided supply voltage(VEXT) and generates, by suitable known regulating circuits, the on-chip supply potential(VINT) or the corresponding internal supply voltage(VINT) formed relative to the reference-ground potential(VSS). The transistor(11) of the dynamic output driver(1) is driven by a precharge signal(ENB'). A high level of the signal(ENB') turns the transistor(11) on, with the result that an output(12) of the dynamic switching stage(1) is precharged to the internal supply potential(VINT-Vthn).
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