Silicon carbide with high thermal conductivity

摘要

A chemical vapor deposited, beta phase polycrystalline silicon carbide having a high thermal conductivity (373W/mK to 390W/mK) and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants, with preferably a H2/MTS ratio of 6. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.