SINGLE ELECTRON TUNNELING TRANSISTOR HAVING MULTILAYER STRUCTURE

摘要

A single electron tunneling transistor which has a multi-layer structure exhibiting a single electron tunneling effect even with processing accuracy of not greater than 0.1 mu m. The multi-layer structure of the single electron tunneling transistor is constituted by alternately growing an electrically conductive layer (11) and a tunneling barrier layer (12). The number of the layers is 50 or more. The structure has a minute tunneling junction having an area on the order of 1 mu m square. <IMAGE>