| 摘要 |
A method of electrically connecting conductors on different levels of a microelectronic device is provided. A dielectric layer is deposited over a first metallic layer and a via is then formed in the dielectric layer extending through the dielectric layer. A via metal is then deposited in the via such that the via is in electrical contact with the first metallic layer. A second metallic layer is then deposited over the via metal such that the second metallic layer is in electrical contact with the via metal. The via metal thereby forms an electrical connection between the first metallic layer and the second metallic layer on opposing surfaces of the dielectric layer. The dielectric layer thereby forms a stencil for deposition of the via metal and an interlevel dielectric separating the first metallic layer from the second metallic layer, while also functioning as a structural substrate for the microelectronic device. A method according to the present invention is useful, for example, to connect a fine pitch conductor on one side of the dielectric layer to a coarse pitch conductor on the opposing side. An associated apparatus is also provided which may also include a microelectronic circuit electrically connected to at least one of the first metallic layer and the second metallic layer. |
