发明名称 Level-shifting signal buffers that support higher voltage power supplies using lower voltage MOS technology
摘要 A level-shifting signal buffer contains a totem pole arrangement of MOS transistors connected to an output thereof and a control circuit that drives the totem pole arrangement of MOS transistors in a preferred manner so that none of the signals across the MOS transistors exceed predetermined limits that may damage the MOS transistors. A preferred signal buffer may include a PMOS pull-up transistor and an NMOS pull-down transistor arranged within a transistor totem pole. This transistor totem pole extends between a first power supply signal line that receives a first power supply signal (e.g., Vddext) and a reference signal line that receives a reference signal (e.g., GND). The PMOS pull-up transistor may be configured to support a maximum gate-to-drain voltage which is less than a difference in voltage between the first power supply signal and the reference signal. The control circuit, which is responsive to a data input signal, drives gate electrodes of the PMOS pull-up transistor and the NMOS pull-down transistor with signals that cause an output of the transistor totem pole to swing from a voltage of the first power supply signal line to a voltage of the reference signal line during a pull-down time interval, while simultaneously maintaining a gate-to-drain voltage of the PMOS pull-down transistor within the maximum gate-to-drain voltage throughout the pull-down time interval.
申请公布号 US6388499(B1) 申请公布日期 2002.05.14
申请号 US20010770099 申请日期 2001.01.25
申请人 INTEGRATED DEVICE TECHNOLOGY, INC. 发明人 TIEN TA-KE;WU CHAU-CHIN
分类号 H03K19/003;(IPC1-7):H03K19/018 主分类号 H03K19/003
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