发明名称 |
Nucleation and deposition of Pt films using ultraviolet irradiation |
摘要 |
A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas through an organic platinum based metal precursor to facilitate transport of precursor vapor to the chamber. The platinum based film is deposited onto a non-silicon bearing substrate in a CVD deposition chamber in the presence of ultraviolet light at a predetermined temperature and under a predetermined pressure. The film is then annealed in an oxygen atmosphere at a sufficiently low temperature to avoid oxidation of substrate. The resulting film is free of silicide and consistently smooth and has good step coverage.
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申请公布号 |
US6387802(B1) |
申请公布日期 |
2002.05.14 |
申请号 |
US20000594339 |
申请日期 |
2000.06.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MARSH EUGENE P. |
分类号 |
C23C16/48;H01L21/02;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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