摘要 |
The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of InxGayAlzN, where x+y+z=1, 0<=x<=1, 0<=y<=1, and 0<=z<=1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
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