发明名称 Vertically integrated semiconductor configuration
摘要 A semiconductor configuration includes at least one semiconductor chip having a first chip side, a second chip side, and connections passing through the at least one semiconductor chip, active structures on the first chip side and the second chip side, the connections electrically connecting the active structures to one another, a support having a first support side, a second support side, plated-through holes, and non-conducting regions running alternately with regular spacings from the first support side to the second support side, the plated-through holes spaced apart from one another to define a hole spacing distance between the holes, contact connections connecting the second chip side to the first support side, the contact connections spaced apart from one another to define a connection spacing distance between the contact connections, and the hole spacing distance being smaller than the connection spacing distance.
申请公布号 US6388320(B2) 申请公布日期 2002.05.14
申请号 US20010897278 申请日期 2001.07.02
申请人 INFINEON TECHNOLOGIES AG 发明人 SMOLA MICHAEL;KUX ANDREAS
分类号 H01L25/18;H01L23/48;H01L25/065;H01L25/07;(IPC1-7):H01L23/04;H01L23/34 主分类号 H01L25/18
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