发明名称 |
Separation process for silicon-on-insulator wafer fabrication |
摘要 |
A process for manufacturing a silicon-on-insulator wafer from a silicon wafer assembly. The assembly is made of two wafers. One of the wafers contains a fragile layer. The fragile layer is a layer containing a high amount of hydrogen. An amount of energy from an energy source is applied to the assembly to separate the assembly along the fragile layer thus forming a silicon-on-insulator wafer and a leftover wafer. The energy source is selected from the group consisting of: ultrasound, infrared, hydrostatic pressure, hydrodynamic pressure, or mechanical energy. The amount of energy is chosen to be sufficient to transform the fragile layer into a quasi-continuous gaseous layer. Under separation the hydrogen-enriched layer transforms into layer consisting of hydrogen platelets and hydrogen microbubbles.
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申请公布号 |
US6387829(B1) |
申请公布日期 |
2002.05.14 |
申请号 |
US20000543998 |
申请日期 |
2000.04.06 |
申请人 |
SILICON WAFER TECHNOLOGIES, INC. |
发明人 |
USENKO ALEXANDER YURI;CARR WILLIAM NED |
分类号 |
H01L21/20;H01L21/762;(IPC1-7):H01L21/425;H01L21/265 |
主分类号 |
H01L21/20 |
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