发明名称 Integrated circuit having forced substrate test mode with improved substrate isolation
摘要 An integrated circuit is described which includes a test mode circuit that allows a substrate of the integrated circuit to be forced to a voltage level dictated by an external connection during a test operation, and provides an improved substrate isolation from the external connection during non-test operations. Both n-channel transistor and p-channel transistor isolation circuit embodiments are described. An integrated circuit memory device is described which incorporated the test mode and isolation circuits. The external connection can be coupled to a negative voltage during non-test operation which is more negative than a threshold voltage below a substrate voltage without inadvertently coupling the external connection and substrate together.
申请公布号 US6388926(B1) 申请公布日期 2002.05.14
申请号 US19990361009 申请日期 1999.07.27
申请人 MICRON TECHNOLOGY, INC. 发明人 GANS DEAN;DEVEREAUX KEVIN
分类号 G01R31/317;G11C5/14;(IPC1-7):G11C29/00 主分类号 G01R31/317
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